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Refractory materials for high-temperature thermoelectric energy conversion

Description: Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. It was… more
Date: January 1, 1983
Creator: Wood, C. & Emin, D.
Partner: UNT Libraries Government Documents Department
open access

Semiconductor processing with excimer lasers

Description: The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser ca… more
Date: January 1, 1983
Creator: Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E. & Cheng, L.J.
Partner: UNT Libraries Government Documents Department
open access

SP-100, a project manager`s view. Technical information report

Description: Born to meet the special needs of America`s space effort, the SP-100 Program testifies to the cooperation among government agencies. The Department of Energy (DOE), the National Aeronautics and Space Administration (NASA), and the Defense Advanced Research Projects Agency (DARPA) are working together to produce a 100-kW power system for use in outer space. At this point in the effort, it is appropriate to review: The approach to meet program goals; the status of activities of the Project Office… more
Date: December 1, 1983
Creator: Truscello, V. C.
Partner: UNT Libraries Government Documents Department
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