Semiconductor processing with excimer lasers

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The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the … continued below

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14 pages

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Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E. & Cheng, L.J. January 1, 1983.

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The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.

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14 pages

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NTIS, PC A02/MF A01.

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  • Topical meeting on optical techniques for remote probing of the atmosphere, Incline Village, NV, USA, 10 Jan 1983

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  • Other: DE83007509
  • Report No.: CONF-830109-3
  • Grant Number: W-7405-ENG-26
  • Office of Scientific & Technical Information Report Number: 5848767
  • Archival Resource Key: ark:/67531/metadc1098952

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • January 1, 1983

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  • Feb. 18, 2018, 3:59 p.m.

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  • Nov. 12, 2020, 3:25 p.m.

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Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E. & Cheng, L.J. Semiconductor processing with excimer lasers, article, January 1, 1983; United States. (https://digital.library.unt.edu/ark:/67531/metadc1098952/: accessed June 8, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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