Transistors operated in the avalanche mode are employed to generate a 1000 volt 10 to 30 nsec wide pulse with less than 4 nsec rise and fall times. This pulse is resistively attenuated to approximately equal to 270 volts and drives the image intensifier tube which is a load of approximately equal to 200 pf. To reduce stray inductance and capacitance, transistor chips were assembled on a thick-film hybrid substrate. Circuit parameters, operating conditions, and coupling to the microchannel plate image-intensifier (MCPI/sup 2/) tube are described. To provide dc operating voltages and control of transient voltages on the MCPI/sup 2/ …
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Transistors operated in the avalanche mode are employed to generate a 1000 volt 10 to 30 nsec wide pulse with less than 4 nsec rise and fall times. This pulse is resistively attenuated to approximately equal to 270 volts and drives the image intensifier tube which is a load of approximately equal to 200 pf. To reduce stray inductance and capacitance, transistor chips were assembled on a thick-film hybrid substrate. Circuit parameters, operating conditions, and coupling to the microchannel plate image-intensifier (MCPI/sup 2/) tube are described. To provide dc operating voltages and control of transient voltages on the MCPI/sup 2/ tube a resistance-capacitance network has been developed which (a) places the MCPI/sup 2/ output phosphor at ground, (b) provides programmable gains in ''f-stop'' steps, and (c) minimizes voltage transients on the MCPI/sup 2/ tube.
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Lundy, A.; Parker, J. R.; Lunsford, J. S. & Martin, A. D.Avalanche transistor pulser for fast-gated operation of micro-channel plate image-intensifiers,
article,
January 1, 1977;
New Mexico.
(https://digital.library.unt.edu/ark:/67531/metadc1056330/:
accessed June 8, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.