Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005

Thumbnail image of item number 1 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.
Thumbnail image of item number 2 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.
Thumbnail image of item number 3 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.
Thumbnail image of item number 4 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.
Showing 1-4 of 25 pages in this report.

PDF Version Also Available for Download.

Description

We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect … continued below

Creation Information

Dupuis, Russell D. January 1, 2006.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by the UNT Libraries Government Documents Department to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 18 times. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Author

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

About | Browse this Partner

Contact Us

Corrections Questions

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Titles

Description

We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect on blue and green LED active region during the p-type layer growth. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {Omega}-cm) and improved optical quality green LED active region emitting at {lambda} {approx}540nm by electroluminescence. The active region of the green LEDs was found to be much more sensitive to the thermal annealing effect during the p-type layer growth than that of the blue LEDs. We have designed grown, fabricated green LED structures for both 520 nm and 540 nm for the evaluation of second year green LED development.

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

About | Browse this Collection

What responsibilities do I have when using this report?

Digital Files

When

Dates and time periods associated with this report.

Creation Date

  • January 1, 2006

Coverage Date

Added to The UNT Digital Library

  • Sept. 23, 2016, 2:42 p.m.

Description Last Updated

  • June 27, 2019, 3:03 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 18
More Statistics

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

Thumbnail image of item number 1 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.
Thumbnail image of item number 2 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.
Thumbnail image of item number 3 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.
Thumbnail image of item number 4 in: 'Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005'.

PDF Version Also Available for Download.

Citations, Rights, Re-Use

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Links for Robots

Helpful links in machine-readable formats.

Archival Resource Key (ARK)

International Image Interoperability Framework (IIIF)

Metadata Formats

Images

URLs

Stats

Dupuis, Russell D. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report: 2005, report, January 1, 2006; United States. (https://digital.library.unt.edu/ark:/67531/metadc892752/: accessed June 7, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

Back to Top of Screen