0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint

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We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV … continued below

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Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W. & Kurtz, S. R. May 1, 2006.

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We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

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  • Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii

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  • Report No.: NREL/CP-520-39913
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 891544
  • Archival Resource Key: ark:/67531/metadc883629

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  • May 1, 2006

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  • Sept. 21, 2016, 2:29 a.m.

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  • April 6, 2017, 1:14 p.m.

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Thumbnail image of item number 1 in: '0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint'.
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Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W. & Kurtz, S. R. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint, article, May 1, 2006; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc883629/: accessed May 13, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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