Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices

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This is the Author Manuscript version of an article presenting high-performance hybrid graphene photodetectors prepared with endohedral fullerenes deposited on graphene using electrophoretic methods for the first time.

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30 p.

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Jayanand, Kishan; Min, Misook; Chugh, Srishti; Kaul, Anupama; Adhikari, Nirmal & Echegoyen, Luis December 19, 2019.

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This is the Author Manuscript version of an article presenting high-performance hybrid graphene photodetectors prepared with endohedral fullerenes deposited on graphene using electrophoretic methods for the first time.

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30 p.

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Abstract: High-performance hybrid graphene photodetectors were prepared with endohedral fullerenes deposited on graphene using electrophoretic methods for the first time. Endohedral Sc₃N@C₈₀, which acts as an electron acceptor, was used and the ensuing electronic and optoelectronic properties were measured. Another endohedral fullerene, La@C₈₂, was also adsorbed on graphene, which acts as an electron donor. Upon optical illumination, for the Sc₃N@C₈₀–graphene hybrid, the photoinduced free holes are injected into graphene, increasing the hole carrier concentration in graphene, while the photoexcited electrons remain in Sc₃N@C₈₀; this leads to a high photoresponsivity ℛ of ∼10⁹ A W⁻¹, detectivity D of ∼10¹⁵ Jones, and external quantum efficiency EQE ∼ 10⁹ % for the Sc₃N@C₈₀–graphene hybrid. This ℛ is ∼10 times higher compared to other reports of quantum dot-graphene and few layer MoS₂–graphene heterostructures. Similarly, for the La@C₈₂–graphene hybrid, ℛ ∼ 10⁸ A W⁻¹, D ∼ 10¹⁴ Jones, and EQE ∼ 10⁶ % were achieved, with electrons being injected into graphene. The exceptional performance gains achieved with both types of hybrid structures confirms the potential of endohedrals to dope graphene for high performance optoelectronic devices using a facile and scalable fabrication process.

This is the Author Manuscript version of the article. The final published version is available at: https://doi.org/10.1039/C9TC06145B

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  • Journal of Materials Chemistry C, 8(12), Royal Society of Chemistry, December 19, 2019, pp. 1-12

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  • Publication Title: Journal of Materials Chemistry C
  • Volume: 8
  • Issue: 12
  • Page Start: 3970
  • Page End: 3981
  • Peer Reviewed: Yes

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  • December 19, 2019

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  • May 27, 2022, 5:49 a.m.

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  • Dec. 8, 2023, 12:06 p.m.

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Jayanand, Kishan; Min, Misook; Chugh, Srishti; Kaul, Anupama; Adhikari, Nirmal & Echegoyen, Luis. Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices, article, December 19, 2019; (https://digital.library.unt.edu/ark:/67531/metadc1934058/: accessed May 26, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Engineering.

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