Inks of dielectric h-BN and semiconducting WS₂ for capacitive structures with graphene

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This article presents dispersions of WS₂ and h-BN using cyclohexanone and terpineol as the solvent to subsequently print prototype capacitive nanodevices.

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6 p.

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Desai, Jay A.; Mazumder, Sangram; Hossain, Ridwan Fayaz & Kaul, Anupama July 30, 2020.

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  • Main Title: Inks of dielectric h-BN and semiconducting WS₂ for capacitive structures with graphene
  • Alternate Title: Inks of dielectric h-BN and semiconducting WS2 for capacitive structures with graphene

Description

This article presents dispersions of WS₂ and h-BN using cyclohexanone and terpineol as the solvent to subsequently print prototype capacitive nanodevices.

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6 p.

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Abstract: We present dispersions of WS₂ and h-BN using cyclohexanone and terpineol as the solvent to subsequently print prototype capacitive nanodevices. An all-inkjet-printing approach was used to print graphene-h-BN-graphene capacitors along with graphene-WS₂-graphene structures. As the number of passes for inkjet printing the h-BN layer within graphene electrodes was increased, the leakage currents successively decreased. The capacitance-frequency (C-f) measurement data for the printed capacitor (with 40 passes of h-BN) within graphene electrodes showed that at ∼1 kHz, the maximum capacitance was ∼62 pF, and with increasing frequency, the capacitance value decreases. The inkjet printed graphene-WS₂-graphene heterostructure devices were also constructed using horn tip sonication, where the C-f measurements revealed that C as high as ∼324.88 pF was attainable, which was largely frequency independent up to ∼20 kHz. This is in contrast with the h-BN layer integrated with graphene electrodes, where the measured C was more than ∼5 times lower over the range of frequencies tested and also exhibited a strong decay as frequency increased from 1 kHz.

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  • Journal of Vacuum Science & Technology B, 38(5), American Institute of Physics, July 30, 2020, pp. 1-6

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  • Publication Title: Journal of Vacuum Science & Technology B
  • Volume: 38
  • Issue: 5
  • Peer Reviewed: Yes

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  • July 30, 2020

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  • July 8, 2020

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  • April 23, 2021, 2:25 p.m.

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  • Dec. 8, 2023, 2:51 p.m.

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Desai, Jay A.; Mazumder, Sangram; Hossain, Ridwan Fayaz & Kaul, Anupama. Inks of dielectric h-BN and semiconducting WS₂ for capacitive structures with graphene, article, July 30, 2020; (https://digital.library.unt.edu/ark:/67531/metadc1783002/: accessed May 30, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Engineering.

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