High-temperature reverse bias and power burn-in at transistor junction temperatures from 150 to 300/sup 0/C. [Identification of potential failures]
Creation Information
Context
Contact Us
Subjects
High-temperature reverse bias and power burn-in at transistor junction temperatures from 150 to 300/sup 0/C. [Identification of potential failures], report, November 1, 1974; Kansas City, Missouri. (https://digital.library.unt.edu/ark:/67531/metadc1062021/: accessed May 30, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.