Cadmium sulfide/copper sulfide heterojunction cell research. Final report, February 26, 1979-July 15, 1980

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Extensive modifications were made to the multi-source deposition apparatus. These include the installation of a larger vacuum chamber on the existing system. The new chamber provides improved inter-source shielding, an improved substrate mounting and heating system, and a vacuum interlock for introducing substrates. CdS resistivity control by both In doping and off-stoichiometric deposition has been investigated. Indium doping has been achieved both by diffusion from a pre-deposited In layer and by using In doped sputtering targets. Resistivities in the range 0.1 to 5 ..cap omega..-cm have been obtained for target doping levels of from 0.1 to 1 at. percent of … continued below

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64 pages

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Thornton, J. A. & Cornog, D. G. June 30, 1980.

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Extensive modifications were made to the multi-source deposition apparatus. These include the installation of a larger vacuum chamber on the existing system. The new chamber provides improved inter-source shielding, an improved substrate mounting and heating system, and a vacuum interlock for introducing substrates. CdS resistivity control by both In doping and off-stoichiometric deposition has been investigated. Indium doping has been achieved both by diffusion from a pre-deposited In layer and by using In doped sputtering targets. Resistivities in the range 0.1 to 5 ..cap omega..-cm have been obtained for target doping levels of from 0.1 to 1 at. percent of In. These resistivities were found to be critically dependent on the H/sub 2/S injection rate, apparently because of compensation by Cd vacancies. Off-stoichiometry CdS coatings with solar-illuminated resistivities of about 10/sup 2/ ..cap omega..-cm have been deposited, using a cyclic reactive sputtering process were the H/sub 2/S injection is periodically switched on and off. The Cu/sub x/S deposition process was found to be sensitive to the period of cathode operation prior to coating deposition, probably because of the conditioning of cathode and shield surfaces. All-sputter-deposited Cd(Zn)S/Cu/sub 2/S cells, with Cd(Zn)S layers deposited using a Cd-0.10 Zn target doped with 2 atomic percent In, have yielded efficiencies of approx. 0.4%. All-sputtered cells with efficiencies of approx. 0.6% have been fabricated, using undoped CdS deposited by the pulse injection process. Efficiencies of approx. 1.2% have been achieved for cells with undoped sputter-deposited CdS and CuCl dry processed Cu/sub 2/S.

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64 pages

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NTIS, PC A04/MF A01.

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  • June 30, 1980

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Thumbnail image of item number 1 in: 'Cadmium sulfide/copper sulfide heterojunction cell research. Final report, February 26, 1979-July 15, 1980'.
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Thornton, J. A. & Cornog, D. G. Cadmium sulfide/copper sulfide heterojunction cell research. Final report, February 26, 1979-July 15, 1980, report, June 30, 1980; United States. (https://digital.library.unt.edu/ark:/67531/metadc1056780/: accessed May 30, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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