Defects in p-GaN and their atomic structure
Description:
In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects. The inside walls of the cavities were covered by GaN which grew with reve…
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Date:
October 8, 2004
Creator:
Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J. & and O'Keefe, M.
Partner:
UNT Libraries Government Documents Department