Defect diffusion during annealing of low-energy ion-implanted silicon
Description:
We present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7x7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of …
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Date:
March 8, 2000
Creator:
Bedrossian, P J; Caturla, M-J & Diaz de la Rubia, T
Partner:
UNT Libraries Government Documents Department