Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors
Description:
The problem with which this investigation is concerned is that of demonstrating the applicability of a particular theory and technique to two materials of different band structure, InSb and HgSe, and in doing so, determining the deformation potentials of these materials. The theory used in this investigation predicts an inversion-asymmetry splitting and an anisotropy of the Fermi surface under uniaxial stress. No previous studies have ever verified the existence of an anisotropy of the Fermi su…
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Date:
December 1972
Creator:
Hathcox, Kyle Lee
Partner:
UNT Libraries