ADVANCING THE ION BEAM THIN FILM PLANARIZATION PROCESS FOR THE SMOOTHING OF SUBSTRATE PARTICLES
Description:
For a number of technologies small substrate contaminants are undesirable, and for one technology in particular, extreme ultraviolet lithography (EUVL), they can be a very serious issue. We have demonstrated that the Ion Beam Thin Film Planarization Process, a coating process designed to planarize substrate asperities, can be extended to smooth {approx}70 nm and {approx}80 nm diameter particles on EUVL reticle substrates to a height of {approx}0.5 nm, which will render them noncritical in an EU…
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Date:
October 19, 2004
Creator:
Mirkarimi, P B; Spiller, E; Baker, S L; Robinson, J C; Stearns, D G; Liddle, J A et al.
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