6 Matching Results

Search Results

Advanced search parameters have been applied.
in creator/contributor: "Luryi, S."  
Results: 1 - 6
open access

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

Description: This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable imp… more
Date: June 9, 2004
Creator: Donetsky, D.; Anikeev, S.; Gu, N.; Belenky, G.; Luryi, S.; Wang, C. A. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

Description: The effects of growth interruption on the quality of GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor phase epitaxy are reported. In-situ reflectance monitoring and ex-situ characterization by high-resolution x-ray diffraction, 4K photoluminescence (PL), and time-resolved PL indicate that GaInAsSb is extremely sensitive to growth interruption time as well as the ambient atmosphere during interruption. By optimizing the interruption sequence, surface recombination velocity as low… more
Date: April 29, 2004
Creator: Wang, C. A.; Shiau, D. A.; Donetsky, D.; Anikeev, S.; Belenky, G. & Luryi, S.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Analysis of Recombination Processes in 0.5 - 0.6eV Epitaxial GaInAsSb Lattice-Matched to GaSb

Description: After a brief introduction and work motivation, static and dynamic methods for minority carrier lifetime measurements will be compared. Data on recombination velocity at heterointerfaces for both p-type and n-type quaternaries will be summarized. Radiative recombination and effect of photon recycling will be considered in detail.
Date: June 7, 2004
Creator: Donetsky, D.; Anikeev, S.; Ning, G.; Belenky, G.; Luryi, S.; Wang, C. A. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Quaternary InGaAsSb Thermophotovoltaic Diodes

Description: In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature … more
Date: March 9, 2006
Creator: Dashiell, M. W.; Beausang, J. F.; Ehsani, H.; Nichols, G. J.; Depoy, D. M.; Danielson, L. R. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence

Description: Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. They report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of infrared devices. They have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organo… more
Date: June 13, 2003
Creator: Anikeev, S.; Donetsky, D.; Belenky, G.; Luryi, S.; Wang, C.A.; Borrego, J.M. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Description: Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of… more
Date: June 9, 2004
Creator: Dashiell, M. W.; Beausang, J. F.; Nichols, G.; Depoy, D. M.; Danielson, L. R.; Ehsani, H. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
Back to Top of Screen