3 Matching Results

Search Results

Advanced search parameters have been applied.
in creator/contributor: "Donetski, D."  
Results: 1 - 3
open access

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Description: Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficie… more
Date: January 26, 2005
Creator: Dashiell, M.; Beausang, J.; Ehsani, H.; Nichols, G.; DePoy, D.; Danielson, L. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Quaternary InGaAsSb Thermophotovoltaic Diodes

Description: In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature … more
Date: March 9, 2006
Creator: Dashiell, M. W.; Beausang, J. F.; Ehsani, H.; Nichols, G. J.; Depoy, D. M.; Danielson, L. R. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Description: Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of… more
Date: June 9, 2004
Creator: Dashiell, M. W.; Beausang, J. F.; Nichols, G.; Depoy, D. M.; Danielson, L. R.; Ehsani, H. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
Back to Top of Screen