Defect reduction in (11-20) a-plane GaN by two step epitaxiallateral overgrowth
Description:
We report a two-step growth method to obtain uniformly coalesced epitaxial lateral overgrown a-plane GaN by metal-organic chemical vapor deposition (MOCVD). By obtaining a large wing height to width aspect ratio in the first step followed by enhanced lateral growth in the second step via controlling the growth temperature, we reduced the tilt angle between the advancing Ga-polar and N-polar wings for improved properties. Transmission electron microscopy (TEM) showed that the threading dislocati…
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Date:
November 25, 2006
Creator:
Ni, X.; Ozgur, U.; Fu, Y.; Biyikii, N.; Morkoc, H. & Liliental-Weber, Z.
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