Stress studies in EFG. Quarterly progress report, April 1-June 30, 1984
Description:
Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200/sup 0/C has been started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while re…
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Date:
August 15, 1984
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