Defect states in plasma-deposited a-Si:H. Technical progress report, August-October 1979
Description:
Raman and ESR measurements were used to study the atomic bonding and defect concentrations. Features are identified in the Raman spectra which can be attributed to configurations containing Si-Si, Si-As and As-As bonds. Features due to all three of these configurations were found to simultaneously exist, thus excluding a chemically ordered model of the bonding. However, the composition dependences of the features do not follow exactly a random bonding model either. The H bonding configurations …
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Date:
December 11, 1979
Creator:
Knights, J C
Item Type:
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Partner:
UNT Libraries Government Documents Department