Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well
Description:
Article describes an experiment in which a hot-electron-enabled route to controlling light with dissipative loss compensation in semiconductor quantum light emitters has been realized for tunable quantum optoelectronic devices via a two-species plasmon system.
Date:
December 10, 2018
Creator:
Ashalley, Eric; Gryczynski, Karol; Wang, Zhiming; Salamo, Gregory & Neogi, Arup
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Partner:
UNT College of Science