Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 2
Description:
Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation in solar cells are reported. Investigations on homogenization of the laser beam were continued. In addition to the 30 mm diameter fused silica rod with a 90/sup 0/ bend configuration, quartz tubes were obtained and briefly tried. Best results were obtained with the rod homogenizer. Laser annealing experimentation resulted in complete recrystallization of …
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Date:
October 1, 1980
Creator:
Katzeff, J. S.
Partner:
UNT Libraries Government Documents Department