Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors
Description:
An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect tech…
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Date:
November 1985
Creator:
Haegel, Nancy Marie
Partner:
UNT Libraries Government Documents Department