Maskless, resistless ion beam lithography
Description:
As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithogra…
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Date:
March 10, 2003
Creator:
Ji, Qing
Partner:
UNT Libraries Government Documents Department