Linear and Nonlinear Optical Techniques to Characterize Narrow Gap Semicondutors: (Hg /Cd)Te and InSb
Description:
Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxTe (HgCdTe) (0.20<x<0.32) and InSb both in the presence of CO2 laser radiation and in the dark. The results have allowed the determination of certain band parameters including the fundamental energy bandgap Eg which is directly related to x, the mole fraction of Cd. In the dark, characterization of several different samples of HgCdTe and InSb were carried out by analyzing the temperature dependenc…
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Date:
May 1986
Creator:
McClure, Stephen Warren
Partner:
UNT Libraries