GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy
Description:
High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing la…
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Date:
December 21, 2004
Creator:
Cardozo, Benjamin Lewin
Partner:
UNT Libraries Government Documents Department