Microcrystalline silicon growth for heterojunction solar cells. Second quarterly report, 1 April 1983-30 June 1983
Description:
In this reporting period, a single source of evaporation with B mixed with highly doped Si was used instead of the co-evaporation of separate Si and B sources. The purpose was to reduce possible carbon contamination. The results of both the heterojunction or heteroface structures, however, were similar to last quarter when evaporation was used. The best Voc of the heterojunction was about 460mV and no improvement in Voc in the heteroface structure, was observed; slight Voc degradation occurred.…
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Date:
January 1, 1983
Creator:
Iles, P. A.; Leung, D. C. & Fang, P. H.
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Partner:
UNT Libraries Government Documents Department