Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS₂ Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
Description:
This article describes the performance of a multifaceted investigation comprising of atomic force microscopy (AFM0, photoluminescence (PL) and Raman spectroscopy to analyze the structural and chemical characteristics to help shed insights on the origins of the superior optoelectronic device performance.
Date:
January 19, 2018
Creator:
Saenz, Gustavo A.; Karapetrov, Goran; Curtis, James & Kaul, Anupama
Item Type:
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Partner:
UNT College of Engineering